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Power Transistors
2SC5104
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.00.3 1.50.1
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q q q
1.5max.
1.1max.
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 500 500 400 7 6 3 1.2 30 1.3 150 -55 to +150 Unit V
10.5min.
2.0
0.80.1
0.5max.
2.540.3 5.080.5 1 2 3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
8.50.2 6.00.3
1.5-0.4
V
2.0
3.0-0.2
V A A A
4.40.5
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.080.5
1
2
3
W C C
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 2V, IC = 1.2A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1.5A, IB1 = 0.15A, IB2 = - 0.3A, VCC = 200V 10 1.0 3.0 0.3 400 10 8 40 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A A V
4.40.5
14.70.5
V
10.00.3
+0.4
+0
1
Power Transistors
PC -- Ta
40 6 TC=25C (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W)
2SC5104
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=100C 25C -25C
VCE(sat) -- IC
Collector power dissipation PC (W)
5
30
Collector current IC (A)
(1)
IB=500mA 4 400mA 300mA 3 200mA 100mA 50mA 1
20
2
10 (2) (3) 0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=5 1000 VCE=5V 100
fT -- IC
VCE=10V f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
0.3 1 3 10
30
10
100 TC=125C 30 25C 10 -25C
10
3 TC=-25C 125C 25C 0.3
3
1
1
3
0.3
0.1 0.1
0.3
1
3
10
30
100
1 0.01 0.03
0.1
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
1000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=10 (2IB1=-IB2) VCC=200V TC=25C tstg
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (s)
300
Collector current IC (A)
10 3 1 ton 0.3 0.1 0.03
10 3 1
ICP IC 10ms 300ms t=1ms
100
30
10
tf
0.3 0.1 0.03 0.01
3
1 1 3 10 30 100
0.01 0 1 2 3 4
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
4.0 3.5 Lcoil=100H IC/IB=5 (IB1=-IB2) TC=25C
2SC5104
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
3.0 2.5 2.0 1.5 1.0 0.5 0 0
IC
-IB2
VCC
tW
Vclamp
100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
Rth(t) -- t
103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
102
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
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2001 MAR

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